TPS1101, TPS1101Y دیتاشیت

TPS1101, TPS1101Y

مشخصات دیتاشیت

نام دیتاشیت TPS1101, TPS1101Y
حجم فایل 760.317 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت TPS1101, TPS1101Y

دانلود دیتاشیت

سایر مستندات

TPS1101D 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments TPS1101D
  • Operating Temperature: -40°C~+150°C@(Tj)
  • Power Dissipation (Pd): 791mW
  • Total Gate Charge (Qg@Vgs): 11.25nC@10V
  • Drain Source Voltage (Vdss): 15V
  • Continuous Drain Current (Id): 2.3A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@10V,2.5A
  • Package: SOP-8
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 791mW (Ta)
  • Base Part Number: TPS110
  • Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Series: -
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Supplier Device Package: 8-SOIC
  • Vgs (Max): +2V, -15V
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Drain to Source Voltage (Vdss): 15V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
  • FET Feature: -
  • Packaging: Tube
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • Part Status: Active
  • FET Type: P-Channel
  • detail: P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC

محصولات مشابه